VCO FOR C/P, CB PLL
FEATURES
Low Series Resistance : 0.6 (Max.)
High Capacitance Ratio : 1.7(Min.) 2.2(Max.)
MAXIMUM RATING (Ta=25 )
1
2
TO-92M
DIM MILLIMETERS
A
B
C
D
E
F
G
H
J
K
1. ANODE
2. CATHODE
3.20 MAX
4.30 MAX
0.55 MAX
2.40 0.15
1.27
2.30
14.00 0.50
0.60 MAX
1.05
1.45
25
0.55 MAX
L
M
N
F
A
G
J
K
D
E
E
L
N
M
C
H
0.80
O
0.75
O
B
+
_
+
_
1
2
2002. 6. 25
1/2
SEMICONDUCTOR
TECHNICAL DATA
KDV251M/S
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
Revision No : 4
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Reverse Voltage
V
R
12
V
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Grade
Type Name
Marking
Lot No.
Q3
CLASSIFICATION OF CAPACITANCE RATIO GRADE
GRADE
CAPACITANCE RATIO (C
1.6V
/C
5V
)
NONE
1.70 2.20
A
1.70 1.82
B
1.80 1.92
C
1.90 2.020
D
2.00 2.12
E
2.10 2.20
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Reverse Voltage
V
R
I
R
=10 A
12
-
-
V
Reverse Current
I
R
V
R
=9V
-
-
200
nA
Capacitance
C
1.6V
V
R
=1.6V, f=1MHz
23
-
38
pF
Capacitance
C
5V
V
R
=5V, f=1MHz
11
-
19
pF
Capacitance Ratio
C
1.6V
/C
5V
1.7
-
2.2
Series Resistance
r
S
V
R
=1V, f=50MHz
-
-
0.6
DIM
MILLIMETERS
1. NC
2. ANODE
3. CATHODE
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
2
1
3
+
_
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